Greener BeeGreen ElectronicsCubic GaN on silicon substrates, and the green gap

Compared with the hexagonal GaN used in all commercial leds, cubic GaN has a lower bandgap and therefore emits longer weavelengths for a given level of indium doping – potentially stretching efficient emission into green.

There is much more about the project on the Electronics Weekly new site.

UK cubic silicon carbide start-up Anvil Semiconductors can use its substrates to grow cubic GaN, and with UK led maker Plessey Semiconductors and the University of Cambridge has a project to do so.

Article source:


Cubic GaN on silicon substrates, and the green gap — No Comments

Leave a Reply

Your email address will not be published. Required fields are marked *